special gas has what and uses*

Release time:2023-03-29

Special gases are widely used in modern life, including factories, medical treatment, food and entertainment. The following describes what special gases include:

1. Nitrogen-n2, purity requirement > 99.999%, used as standard gas, online instrument standard gas, calibration gas, zero gas, balance gas; Used for epitaxy, diffusion, chemical vapor deposition, ion implantation, plasma dry engraving, photolithography, annealing and bonding, sintering and other processes in semiconductor device preparation process; Electrical appliances, food packaging, chemical and other industries also use nitrogen.

2, oxygen -O2,> 99.995%, used as standard gas, online instrument standard gas, calibration gas, zero gas; It can also be used for medical gas, thermal oxidation, diffusion, chemical vapor deposition, plasma dry etching and other processes in semiconductor device preparation process, as well as for the preparation of optical fiber.

3, Argon -Ar, > 99.999%, used as standard gas, zero gas, balance gas; In the semiconductor device preparation process of crystal growth, thermal oxidation, epitaxy, diffusion, nitriding, injection, plasma dry engraving, current carrying, annealing and bonding, sintering and other processes; Argon is also used in specialty and industrial blends.

4. Hydrogen-h2,> 99.999%, used as standard gas, zero gas, balance gas, calibration gas, online instrument standard gas; In the semiconductor device preparation process for crystal growth, thermal oxidation, epitaxy, diffusion, polysilicon, tungstate, ion implantation, current carrier, sintering and other processes; It is also useful in chemistry, metallurgy and other industries.

5. Helium -He, > 99.999%, used as standard gas, zero gas balance gas, calibration gas, medical gas, used in semiconductor device error preparation process of crystal growth, plasma dry engraving current load and other processes; In addition, special blends and industrial blends are also commonly used.

6, chlorine gas -Cl2, > 99.86%, used as standard gas, calibration gas, used in semiconductor device preparation process of crystal growth, plasma dry engraving, thermal oxidation and other processes; In addition, for water purification, pulp and textile bleaching, industrial waste, sewage, swimming pool sanitation treatment, preparation of many chemical products.

7, fluorine gas -F2, > 98% is used for plasma dry engraving in semiconductor device preparation process; In addition, it is used to prepare uranium hexafluoride, sulfur hexafluoride, boron trifluoride and metal fluoride.

8. Ammonia-nh3, > 99.995%, used as standard gas, calibration gas, online instrument standard gas; Used in semiconductor device preparation process nitrogen chemical sequence, in addition, used in refrigeration, fertilizer, petroleum, mining, rubber and other industries.

9, hydrogen chloride -HCI, > 99.995%, used as a standard gas, used for epitaxial, thermal oxidation, diffusion and other processes in the preparation process of semi-conductive devices; In addition, it is used as a chemical intermediate in rubber hydrochloration reaction, to produce vinyl and alkyl chloride.

10, nitric oxide -N0, > 99%, used as standard gas, calibration gas; Used in chemical vapor deposition process of semiconductor device preparation process to prepare the standard mixture of air pollution monitoring.

11, carbon dioxide-CO2, > 99.99%, used as standard gas, online instrument standard gas, calibration gas; Used in semiconductor device preparation process oxidation, current carrying process, in addition, also used for special mixture, power generation, gas replacement treatment, sterilization gas diluent, fire extinguishing agent, food freezing, metal cold treatment, drink aeration, smoke spraying agent, food storage protective gas, etc.

12, nitrous oxide -N2O, (laughing gas), > 99.999% used as standard gas and medical gas; It is also used for chemical vapor deposition, medical anesthetic, smoke spray agent, vacuum and pressure leak detection, infrared spectrum analyzer, etc.

13, hydrogen sulfide -H2S, > 99.999%, used as standard gas, calibration gas, used in semiconductor device preparation process plasma dry engraving, chemical industry for the preparation of sulfide, such as sodium sulfide, sulfide organic matter; Used as a solvent; For experimental quantitative analysis.

14, carbon tetrachloride -CCl4,> 99.99%, used as a standard gas, used in semiconductor device preparation process epitaxial, chemical vapor deposition and other processes; In addition, it is used as solvent, chlorination agent of organic matter, leaching agent of spices, degreasing agent of fiber, extinguishing agent, analytical reagent, preparation of chloroform and medicine, etc.

15. Hydrogen cyanide; 99.9%, used for plasma dry engraving process in semiconductor device preparation process; Preparation of hydrocyanic acid solution; Metal cyanide, cyanide chloride; It is also used to prepare synthetic intermediates of acrylonitrile and propylene derivatives.

16, carbyl fluoride -COF2, > 99.99%, used for plasma dry engraving process in semiconductor device preparation process; In addition; Used as a fluorinating agent.

17. Carbyl sulfide -COS, > 99.99%, used for correcting qi; Used for ion implantation in semiconductor device preparation process; It is also used in the synthesis of some carboxyl groups, thionic acids, thiocarbonates and thiazoles.

18. Hydrogen iodide -HI, > 99.95%, used for ion implantation process in semiconductor device preparation process; Also used for hydroiodic acid solution preparation.

19. Hydrogen bromide -HBr, > 99.9%, used for plasma dry engraving process in semiconductor preparation process; Used as reducing agent to prepare organic and inorganic bromine compounds.

2O, silane-SiH4, > 99.999%, resistivity > 100Ω /cm2 is used for epitaxy and chemical vapor deposition in semiconductor device preparation process.

21. Ethyl silane-Si2H6, > 99.9%, for chemical vapor deposition in semiconductor preparation process

22. Phosphoane-ph3,> 99.999% for epitaxy, diffusion, chemical gas in semiconductor device preparation process

Deposition, ion implantation, etc. : A low concentration gas mixed with carbon dioxide, phosphoane can be used to kill the eggs of granaries and prepare fire retarding compounds.

23. Arsene-ash3, > 99.999%, used in semiconductor device preparation process epitaxy, expansion, chemical vapor deposition, ion implantation and other processes.

keyword: special gas has what and uses*

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